The control of the density and location of dislocations (line defects)
in heteroepitaxial thin film is very important in designing
semiconductor-based electronic devices. We have developed a level set
method based, three dimensional dislocation dynamics simulation method
to describe the motion of dislocations in thin films. The dislocation
location is given by the intersection of the zero level sets of a pair
of level set functions. This representation does not require
discretization and tracking of the dislocation, and handles topological
changes automatically. The simulation method incorporates the elastic
interactions of the dislocations and the stress fields throughout the
film and substrate. Using the above approach, various dislocation
motion and interactions within a heteroepitaxial thin film are simulated
and analyzed.